Substrates and transistors with 2D material channels on 3D geometries

An article of manufacture comprising:

• a non-transitory machine readable data storage medium storing a plurality of software code portions defining logic for selecting a design entry for an integrated circuit from a library including a plurality of design entries, entries in the library including specifications of particular cells in a computer readable description language, at least one entry in the library comprising:
• a specification for a macrocell which includes a first transistor which includes a first longitudinal segment of semiconductor material, and a gate conductor crossing the first segment of semiconductor material transversely,
• the specification terminating the first segment of semiconductor material at a first longitudinal end,
• wherein the specification defines the first longitudinal segment of semiconductor material in a semiconductor 2D material layer.

A method of making an integrated circuit structure having a transistor device, comprising:

• providing a three-dimensional body having longitudinal and transverse dimensions and further having at least first and second non-coplanar surfaces disposed transversely from one another on the body;
• forming a semiconductor 2D material layer conformally on the body so as to overlie at least the first and second surfaces along a particular longitudinal segment of the body, the semiconductor 2D material layer terminating longitudinally at a first longitudinal end;
• and
• without forming a gate conductor crossing the body at the first longitudinal end:
• forming a particular gate conductor crossing the particular segment of the body transversely, at a position which is spaced from the first longitudinal end longitudinally, and
• forming source, gate and drain terminals connected to the device, at least one of the source and drain terminals being connected to the semiconductor 2D material layer and the gate terminal connected to the particular gate conductor.

An integrated circuit structure having a transistor device, comprising:

• a three-dimensional body having longitudinal and transverse dimensions and further having at least first and second non-coplanar surfaces disposed transversely from one another on the body;
• a semiconductor 2D material layer disposed conformally on the body so as to overlie at least the first and second surfaces along a particular longitudinal segment of the body, the semiconductor 2D material layer terminating longitudinally at a first longitudinal end;
• a particular gate conductor crossing the particular segment of the body transversely, at a position which is spaced from the first longitudinal end longitudinally;
• and
• source, gate and drain terminals connected to the device, at least one of the source and drain terminals being connected to the semiconductor 2D material layer and the gate terminal connected to the particular gate conductor,
• the device lacking any gate conductor crossing the body at the first longitudinal end.