Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Chuan You, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
Life of this patent
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Abstract
A semiconductor device and method of forming the same are provided. The semiconductor device includes a gate structure formed over a substrate. A spacer layer is formed on side portions of the gate structure. A first dielectric layer is formed over the gate structure. A conductive cap layer passes through the first dielectric layer and is formed over the gate structure. A top surface of the conductive cap layer is above a top surface of the spacer layer. The semiconductor device further includes a conductive layer formed over the conductive cap layer. The conductive layer is electrically coupled with the conductive cap layer.
Claims20
A semiconductor device, comprising:
- a gate structure formed over a substrate;
- a spacer layer formed on side portions of the gate structure;
- a first dielectric layer formed over the gate structure, the first dielectric layer having a stepped bottom surface having a lower step in contact with a top surface of the gate structure and an upper step in contact with a top surface of the spacer layer;
- a conductive cap layer passing through the first dielectric layer and being formed over the gate structure, a top surface of the conductive cap layer being above the upper step of the stepped bottom surface of the first dielectric layer;
- and
- a conductive layer formed over the conductive cap layer, the conductive layer being electrically coupled with the conductive cap layer.
A semiconductor device, comprising:
- a metal gate formed over a substrate;
- a spacer layer formed on side portions of the metal gate, a top surface of the spacer layer being above a top surface of the metal gate;
- a first dielectric layer formed over the metal gate and the spacer layer;
- a second dielectric layer formed over the first dielectric layer;
- a third dielectric layer formed over the second dielectric layer;
- a first contact structure passing through the first dielectric layer, the second dielectric layer, and the third dielectric layer, the first contact structure having side portions and a bottom portion, and the bottom portion being in direct contact with the metal gate;
- a metal cap layer formed over the bottom portion of the first contact structure, the metal cap layer being in direct contact with the metal gate, and a top surface of the metal cap layer being above an interface formed by the spacer layer and the first dielectric layer and below a top surface of the first dielectric layer;
- a conductive barrier layer formed in the first contact structure, the conductive barrier layer being formed over the metal cap layer and along the side portions of the first contact structure;
- and
- a metal layer formed over the conductive barrier layer in the first contact structure.
A semiconductor device, comprising:
- a metal gate structure over a substrate;
- gate spacers extending from sidewalls of the metal gate structure to past a top surface of the metal gate structure;
- a dielectric helmet capping and in contact with top surfaces of both the metal gate structure and the gate spacers;
- and
- a metal cap extending vertically in the dielectric helmet to the metal gate structure from a position lower than a topmost surface of the dielectric helmet and higher than topmost surfaces of the gate spacers, wherein the metal cap is laterally spaced from the gate spacers at least in part by the dielectric helmet.
Dependencies are inferred from the claim text.