US 10,950,730 B2 · Merged source/drain features

Abstract

The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Claims20

Dependent claims

A method comprising:

recessing a fin extending from a substrate;
forming a base epitaxial feature on the recessed fin;
forming a bar-like epitaxial feature on the base epitaxial feature;
and
forming a conformal epitaxial feature on the bar-like epitaxial feature,
wherein the forming of the bar-like epitaxial feature comprises in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration,
wherein the forming of the conformal epitaxial feature comprises in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

4 more elements

A device comprising:

a substrate;
a first plurality of fins extending from the substrate in an n-type device region, wherein each of the first plurality of fins includes an n-type channel region;
a second plurality of fins extending from the substrate in a p-type device region, wherein each of the second plurality of fins includes a p-type channel region;
an isolation feature disposed on the substrate between the first plurality of fins and between the second plurality of fins;
spacers disposed on the isolation feature alongside the first plurality of fins and alongside the second plurality of fins;
a source/drain feature disposed on the first plurality of fins adjacent the n-type channel region of the respective fin, wherein the source/drain feature includes:
a first epitaxial layer disposed on each of the first plurality of fins between the spacers;
a second epitaxial layer disposed on the first epitaxial layer that extends above the spacers and spans the first plurality of fins, wherein the second epitaxial layer extends above the spacers at an angle between about 65° and about 80°;
and
a third epitaxial layer disposed on the second epitaxial layer that spans the first plurality of fins;
and
a plurality of gate structures disposed on the n-type and p-type channel regions.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/529,357Filed 1 Aug 2019 · us provisional application

Priority

31 Oct 2018

Published

US 2020/0135914 A130 Apr 2020

Granted

16 Mar 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification25 codes

H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]
A61B 5/150099
Means for enhancing collection: by negative pressure, other than vacuum extraction into a syringe by pulling on the piston rod or into…
A61B 5/150992
Devices for taking samples of blood: blood sampling from a fluid line external to a patient, such as a catheter line, combined with an infusion…
G01N 1/14
In the liquid or fluent state: suction devices, e.g. pumps; Ejector devices

Merged source/drain features

Life of this patent

Merged source/drain features

Life of this patent

Abstract

Claims20