Contact structure with insulating cap

A semiconductor device structure, comprising:

• a fin structure over a semiconductor substrate;
• a contact structure electrically connected to a source/drain feature in the fin structure;
• a gate structure across the fin structure and adjacent to the contact structure, comprising:
• a gate electrode layer;
• a conductive capping feature formed over the gate electrode layer;
• and
• a gate spacer between the gate electrode layer and the contact structure;
• a first insulating capping feature formed over the gate structure;
• a second insulating capping feature passing through the first insulating capping feature to contact an upper surface of the contact structure;
• an insulating layer formed over the first insulating capping feature and the second insulating capping feature;
• a via structure passing through the insulating layer and the first insulating capping feature, and electrically connected to the conductive capping feature,
• wherein the second insulating capping feature comprises a material that is different from a material of the first insulating capping feature and a material of the insulating layer.

A semiconductor device structure, comprising:

• a gate stack across a fin structure of a semiconductor substrate, comprising:
• a gate electrode layer;
• and
• a conductive capping feature over the gate electrode layer;
• a gate spacer formed over a sidewall of the gate stack;
• a contact structure formed over the fin structure and adjacent to the gate spacer, so that the contact structure is separated from the gate stack by the gate spacer, wherein the contact structure has an upper surface that is substantially level with an upper surface of the conductive capping feature and an upper surface of the gate spacer;
• a first insulating capping feature formed over the conductive capping feature;
• and
• a second insulating capping feature covering the gate spacer and the contact structure, wherein the second insulating capping feature is in direct contact with the first insulating capping feature, and has an upper surface that is substantially level with an upper surface of the first insulating capping feature.