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US 10,950,726 B2Granted
Semiconductor device, CMOS circuit, and electronic apparatus with stress in channel region
AssigneeSony Corporation
InventorYuki Yanagisawa
Life of this patent
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Abstract
The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.
Claims15
A semiconductor device, comprising:
- a transistor including
- a source of a first semiconductor type,
- a drain of the first semiconductor type, and
- a body region of a second semiconductor type,
- wherein the body region is between the source and the drain;
- and
- one of a hollow region or an insulating region below a channel, wherein
- the channel is between the source and the drain in the body region, and
- the channel is different from both the source and the drain in the body region.
6 more elements
A Complementary Metal Oxide Semiconductor (CMOS) circuit, comprising
- a semiconductor device including
- a transistor including
- a source of a first semiconductor type,
- a drain of the first semiconductor type, and
- a body region of a second semiconductor type,
- wherein the body region is between the source and the drain;
- and
- one of a hollow region or an insulating region below a channel, wherein
- the channel is between the source and the drain in the body region, and
- the channel is different from both the source and the drain in the body region.
7 more elements
An electronic apparatus, comprising:
- a semiconductor device including
- a transistor including
- a source of a first semiconductor type,
- a drain of the first semiconductor type, and
- a body region of a second semiconductor type,
- wherein the body region being is between the source and the drain;
- and
- one of a hollow region or an insulating region below a channel, wherein
- the channel is between the source and the drain in the body region, and
- the channel is different from both the source and the drain in the body region.
7 more elements
Dependencies are inferred from the claim text.