Electrostatic discharge guard ring with complementary drain extended devices
AssigneeTexas Instruments Incorporated
InventorsSunglyong Kim, Seetharaman Sridhar, Sameer Pendharkar, David LaFonteese
Life of this patent
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Abstract
An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection structure includes a p-channel device and an n-channel device. The p-channel device includes an n-type barrier region circumscribing a p-type drain region with an n-type body region. The p-channel device may be positioned adjacent to the n-channel device and a high voltage junction diode.
Claims15
A device, comprising:
- a substrate having a surface;
- a first doped layer buried under the surface, and having a first conductivity type;
- a second doped layer, buried under the surface, having the first conductivity type and being spaced laterally from the first doped layer;
- a first body region extending from the surface to the first doped layer, and having the first conductivity type;
- a second body region extending from the surface to the second doped layer, and having the first conductivity type;
- a drain region extending from the surface to the first doped layer, and having a second conductivity type opposite to the first conductivity type;
- a RESURF region extending down from the surface to the second doped layer and having the second conductivity type;
- a barrier region extending from the surface to the doped layer, and having the first conductivity type, the barrier region laterally enclosing the drain region with the body region;
- and
- an isolated drain region extending from the surface to the second doped layer and having the first conductivity type.
A device, comprising:
- (a) a first transistor including:
- a first doped region extending along a length dimension between a first end and a second end, and extending along a width dimension between a first side and a second side, the first doped region having a first conductivity type;
- a second doped region circumscribing the first doped region along the first and second ends and the first and second sides, the second doped region having a second conductivity type opposite to the first conductivity type;
- a contact region separated from the first doped region by the second doped region near the second end, the contact region having the first conductivity type;
- a gate structure above and across the first doped region and the second doped region along the second end;
- (b) a second transistor spaced from the first transistor and including:
- a third doped region separated from the first doped region and the second doped region, the third doped region having the first conductivity type;
- a fourth doped region above the third doped region and separated from the first doped region and the second doped region, the fourth doped region having the second conductivity type;
- an isolated drain region contacting the third doped region and having the first conductivity type.
Dependencies are inferred from the claim text.