Seminconductor device with spreading layer

A method of manufacturing a semiconductor device comprising:

• growing a drift layer on a substrate;
• growing a spreading layer on the drift layer such that the substrate, the drift layer, and the spreading layer have a first doping type, and the spreading layer has a doping concentration that is higher than a doping concentration of the drift layer;
• providing a metal-oxide semiconductor field-effect transistor (MOSFET) comprising:
• implanting a first implant region and a second implant region in the spreading layer opposite the drift layer such that the first implant region and the second implant region are separated by a portion of the spreading layer and have a second doping type that is opposite the first doping type;
• etching a first trench in the spreading layer opposite the drift layer between the first implant region and the second implant region;
• depositing a first oxide layer on the spreading layer in the first trench;
• providing a channel re-growth layer between the first oxide layer and the spreading layer in the first trench and between the first oxide layer and a top surface of the first implant region, wherein the channel re-growth layer has the first doping type;
• providing a gate contact on the first oxide layer;
• providing a source contact on the spreading layer over the first implant region and the second implant region;
• and
• providing a drain contact on the substrate opposite the drift layer;
• and
• providing a junction barrier Schottky (JBS) diode adjacent to the MOSFET and comprising:
• providing a third implant region in the spreading layer opposite the drift layer such that the third implant region is laterally separated from the second implant region by a portion of the spreading layer and has the second doping type;
• providing an anode contact on a surface of the spreading layer between the second implant region and the third implant region such that the channel re-growth layer is between the anode contact and the spreading layer;
• and
• providing a cathode contact over a surface of the substrate opposite the drift layer.