IGBT with fully depletable n- and p-channel regions

A power semiconductor device having a semiconductor body coupled to a first load terminal structure and a second load terminal structure, the semiconductor body being configured to conduct a load current and comprising a drift region of a first conductivity type, wherein the power semiconductor device includes a plurality of cells, each cell comprising:

• a first mesa included in a first cell portion, the first mesa including:
• a first port region of the first conductivity type being electrically connected to the first load terminal structure, and a first channel region being coupled to the drift region;
• a second mesa included in a second cell portion, the second mesa including:
• a second port region of a second conductivity type and being electrically connected to the first load terminal structure, and a second channel region being coupled to the drift region;
• a trench structure including a control electrode structure for controlling the load current at least by means of a conductive channel in the first channel region;
• a guidance zone of the second conductivity type arranged below the second channel region, wherein the guidance zone laterally overlaps with the second mesa and laterally extends towards the first mesa while not laterally overlapping therewith in the lateral direction;
• a barrier zone of the first conductivity type being arranged between the guidance zone and the trench structure, wherein the barrier zone has a dopant concentration at least twice as great as the dopant concentration of the drift region.

A method of processing a power semiconductor device having a semiconductor body coupled to a first load terminal structure and a second load terminal structure, the semiconductor body being configured to conduct a load current and comprising a drift region of a first conductivity type, wherein the power semiconductor device includes a plurality of cells, each cell comprising:

• a first mesa included in a first cell portion, the first mesa including:
• a first port region of the first conductivity type being electrically connected to the first load terminal structure, and a first channel region being coupled to the drift region;
• a second mesa included in a second cell portion, the second mesa including:
• a second port region of the second conductivity type and being electrically connected to the first load terminal structure, and a second channel region being coupled to the drift region;
• and a trench structure including a control electrode structure for controlling the load current at least by means of a conductive channel in the first channel region;
• wherein the method comprises:
• a) providing the first mesa with a total extension of less than 100 nm in a lateral direction perpendicular to a vertical direction of the load current part within the first mesa;
• and providing a guidance zone of a second conductivity type arranged below the second channel region while being spatially displaced from both the first and the second channel region along the vertical direction, wherein the guidance zone laterally overlaps with the second mesa and laterally extends towards the first mesa while not laterally overlapping therewith;
• and/or
• b) providing a guidance zone of a second conductivity type arranged below the second channel region, wherein the guidance zone laterally overlaps with the second mesa and laterally extends towards the first mesa while not laterally overlapping therewith;
• and providing a barrier zone of the first conductivity type being arranged between the guidance zone and the trench structure, wherein the barrier zone has a dopant concentration at least twice as great as the dopant concentration of the drift region.