Metal oxide TFT, manufacturing method thereof, and display device

A manufacturing method for a metal oxide thin film transistor (TFT), comprising

• forming a shielding layer on a substrate;
• forming a second insulation layer on the substrate and the shielding layer;
• forming a metal oxide layer on the second insulation layer;
• forming a third insulation layer on the second insulation layer and the metal oxide layer;
• forming a first metallic layer and a first photoresist layer sequentially stacked on the third insulation layer;
• forming a gate insulation layer, a gate electrode, and a first photoresist pattern layer by patterning the first photoresist layer, the first metallic layer, and the third insulation layer, where the gate insulation layer comprises a first insulation section adjoining a lateral side of the metal oxide layer, a second insulation section adjoining another lateral side of the metal oxide layer, and a third insulation section disposed on the metal oxide layer;
• the gate electrode is disposed on the third insulation section, and the first photoresist pattern layer comprises a first photoresist section disposed on the first insulation section, a second photoresist section disposed on the second insulation section, and a third photoresist section disposed on the gate electrode;
• obtaining a metal oxide semiconductor layer by conducting conductorization to the metal oxide layer;
• forming a second photoresist layer on the metal oxide semiconductor layer and the first photoresist pattern layer, where the second photoresist layer is disposed on the first photoresist section, the second photoresist section, the third photoresist section, the metal oxide semiconductor layer, and the second insulation layer, and the second photoresist layer and the first photoresist pattern layer jointly form an integral photoresist layer;
• conducting ashing process to the integral photoresist layer, and lifting the ashing-processed integral photoresist layer;
• forming a first insulation layer on the metal oxide semiconductor layer and the gate electrode;
• and
• forming independent source electrode and drain electrode on the first insulation layer that penetrate the first insulation layer and contact the metal oxide semiconductor layer.