Semiconductor device

A semiconductor device, comprising:

• a substrate comprising a first active region and a second active region;
• a first active pattern and a second active pattern disposed in the first and second active regions, respectively;
• a first gate electrode and a second gate electrode crossing the first and second active patterns, respectively;
• and
• a first gate insulating pattern interposed between the first active pattern and the first gate electrode, and a second gate insulating pattern interposed between the second active pattern and the second gate electrode,
• wherein the first gate insulating pattern comprises a first dielectric pattern and a first ferroelectric pattern disposed on the first dielectric pattern,
• the second gate insulating pattern comprises a second dielectric pattern and a second ferroelectric pattern disposed on the second dielectric pattern, and
• at least one of a ferroelectric material and an impurity concentration of the first ferroelectric pattern is different from at least one of a ferroelectric material and an impurity concentration of the second ferroelectric pattern.

A semiconductor device, comprising:

• a substrate comprising a first active region and a second active region;
• a first active pattern and a second active pattern disposed in the first and second active regions, respectively;
• a first gate electrode and a second gate electrode crossing the first and second active patterns, respectively;
• a gate spacer disposed on a side surface of each of the first and second gate electrodes;
• a first dielectric pattern and a first ferroelectric pattern, which are interposed between the first gate electrode and the gate spacer;
• and
• a second dielectric pattern interposed between the second gate electrode and the gate spacer,
• wherein the first gate electrode comprises a work function metal pattern including a metal nitride layer and an electrode pattern, and
• the first ferroelectric pattern is on at least one sidewall of the work function metal pattern and interposed between the first dielectric pattern and the at least one sidewall of the work function metal pattern.