Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
AssigneeAcorn Semi, LLC
InventorsDaniel E. Grupp, Daniel J. Connelly
Life of this patent
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Abstract
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
Claims23
An electrical junction comprising an interface layer disposed between and in contact with a contact metal and a source or drain of a transistor, the source or drain comprising silicon and the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 10 Ω-μm2 and comprising a spacer layer that is an oxide of titanium and a passivating layer that is an oxide of silicon.
An electrical junction comprising an interface layer disposed between and in contact with a contact metal and an n-type silicon source or drain of a transistor, the interface layer configured to provide a specific contact resistivity of the electrical junction of less than 10 Ω-μm2 and comprising a spacer layer presenting a potential barrier lower than 1 eV and a layer having a thickness of approximately 0.1 nm to 5 nm that is an oxide of silicon.
Dependencies are inferred from the claim text.