US 10,950,699 B2 · Termination for vertical trench shielded devices

Abstract

A vertical trench shield device can include a plurality of gate structures and a termination structure surrounding the plurality of gate structures. The plurality of gate structures can include a plurality of gate regions and a corresponding plurality of gate shield regions. The plurality of gate structures can be disposed between the plurality of source regions, and extending through the plurality of body regions to the drift region. The plurality of gate structures can be separated from each other by a first predetermined spacing in a core area. A first set of the plurality of gate structures can extend fully to the termination structure. The ends of a second set of the plurality of gate structures can be separated from the termination structure by a second predetermined spacing. The first and second spacings can be configured to balance charge in the core area and the termination area in a reverse bias condition.

Claims22

Dependent claims

A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) device comprising:

a plurality of gate structures including a plurality of gate regions and a corresponding plurality of gate shield regions, wherein the plurality of gate structures are parallel to each other and separated from each other in a core area;
and
one or more termination structures surrounding the plurality of gate structures in a termination area, wherein the plurality of gate shield regions extend to a first termination structure in a predetermined pattern configured to balance charge in the core area and a termination area in a reverse bias condition, wherein the predetermined pattern includes a first set of the plurality of gate shield regions that extend fully to the first termination structure and ends of a second set of the plurality of gate shield that are separated from the first termination structure.

A MOSFET device comprising:

a drain region;
a drift region disposed on the drain region;
a plurality of body regions disposed on the drift region opposite the drain region;
a plurality of source regions disposed on the plurality of body regions;
a plurality of gate structures disposed between the plurality of source regions, and extending through the plurality of body regions to the drift region in a core are wherein the plurality of gate structures include a plurality of gate regions and a corresponding plurality of gate shield regions, and wherein the plurality of gate structures are separated from each other in a core area;
a termination structure surrounding the plurality of gate structures, the plurality of source regions and the plurality of body regions in a termination area, wherein a first set of the plurality of gate structures extend fully to the termination structure and ends of a second set of the plurality of gate structures are separated from the termination structure to balance charge in the core area in a reverse bias condition.

3 more elements

A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) device comprising:

a plurality of gate structures including a plurality of gate regions and a corresponding plurality of gate shield regions, wherein the plurality of gate structures are parallel to each other and separated from each other in a core area;
and
one or more termination structures surrounding the plurality of gate structures in a termination area, wherein the plurality of gate shield regions extend to a first termination structure in a predetermined pattern configured to balance charge in the core area and the termination area in a reverse bias condition, wherein the predetermined pattern includes one or more gate structures of a first set of the plurality of gate structures that surround ends of each respective one of a second set of the plurality of gate structures in the termination area, and wherein the first set of the plurality of gate structures are separated from adjacent ones of the second set of the plurality of gate structures and adjacent portions of the termination structure.

Dependencies are inferred from the claim text.

Termination for vertical trench shielded devices

Life of this patent

Termination for vertical trench shielded devices

Life of this patent

Abstract

Claims22