Method and apparatus for selective nitridation process

A method for processing a substrate in a processing region of a process chamber, comprising:

• generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe further comprising a mounting sleeve and an inlet member connecting to the mounting sleeve, wherein the mounting sleeve includes a hollow body defining the longitudinally extending sleeve passageway, and the inlet member includes a hollow body defining the longitudinally extending inlet passageway, the mounting sleeve having a first end connecting to a gas outlet of the remote plasma source and a second end connecting to the inlet member so that the longitudinally extending inlet passageway is substantially aligned with the longitudinally extending sleeve passageway, and the mounting sleeve having a diameter gradually reduced along a longitudinal axis of the longitudinally extending sleeve passageway to match a diameter of the longitudinally extending inlet passageway;
• flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, the inlet port have an interior surface, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to a longitudinal axis of the inlet port into the inlet port, the plasma species colliding with the interior surface of the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber;
• and
• selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

A method for processing a substrate in a processing region of a process chamber, comprising:

• generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe further comprising a mounting sleeve and an inlet member connecting to the mounting sleeve, wherein the mounting sleeve includes a hollow body defining the longitudinally extending sleeve passageway, and the inlet member includes a hollow body defining the longitudinally extending inlet passageway, the mounting sleeve having a first end connecting to a gas outlet of the remote plasma source and a second end connecting to the inlet member so that the longitudinally extending inlet passageway is substantially aligned with the longitudinally extending sleeve passageway, the second end being opposed to the first end, and the longitudinally extending inlet passageway having a diameter gradually reduced along a longitudinal axis of the longitudinally extending inlet passageway;
• flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, the inlet port have an interior surface, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to the longitudinal axis of the inlet port into the inlet port, the plasma species colliding with the interior surface of the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber;
• and
• selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.