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US 10,950,696 B2Granted
Silicon carbide semiconductor component
AssigneeInfineon Technologies AG
InventorsThomas Basler, Hans-Joachim Schulze, Ralf Siemieniec
Life of this patent
Estimating the term…
Abstract
A semiconductor component includes a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type. A zone of the first conductivity type is formed in a vertical direction between a semiconductor region of a second conductivity type and the drift zone. The zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction.
Claims17
A semiconductor component, comprising:
- a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type;
- a semiconductor region of a second conductivity type;
- a zone of the first conductivity type formed in a vertical direction between the semiconductor region and the drift zone,
- wherein the zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction,
- wherein the semiconductor component is a vertical semiconductor component having load terminals formed at opposite surfaces of the SiC semiconductor body,
- wherein the field effect transistor structure comprises a cell array region comprising a plurality of transistor cells,
- wherein an edge termination region at least partly surrounds the cell array region,
- wherein in the cell array region, the zone is formed in a continuous fashion or is structured in accordance with a pattern of the arrangement of the plurality of transistor cells.
5 more elements
A semiconductor component, comprising:
- a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type;
- a semiconductor region of a second conductivity type;
- a zone of the first conductivity type formed in a vertical direction between the semiconductor region and the drift zone,
- wherein the zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction,
- wherein the gate structure is a planar gate structure.
2 more elements
A semiconductor component, comprising:
- a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type;
- a semiconductor region of a second conductivity type;
- a zone of the first conductivity type formed in a vertical direction between the semiconductor region and the drift zone,
- wherein the zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction,
- wherein the semiconductor region of the second conductivity type is a body region.
2 more elements
A semiconductor component, comprising:
- a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type;
- a semiconductor region of a second conductivity type;
- a zone of the first conductivity type formed in a vertical direction between the semiconductor region and the drift zone,
- wherein the zone is spaced apart from the gate structure,
- wherein the semiconductor component is a vertical semiconductor component having load terminals formed at opposite surfaces of the SiC semiconductor body,
- wherein the field effect transistor structure comprises a cell array region comprising a plurality of transistor cells,
- wherein an edge termination region at least partly surrounds the cell array region,
- wherein in the cell array region, the zone is formed in a continuous fashion or is structured in accordance with a pattern of the arrangement of the plurality of transistor cells.
5 more elements
Dependencies are inferred from the claim text.