Doping for semiconductor device with conductive feature

A structure comprising:

• a substrate comprising a fin, the fin having a source/drain region, the source/drain region comprising a germanium-containing material, the source/drain region further comprising a profile of a gallium concentration, the profile having a platform having a uniform gallium concentration extending from a surface of the source/drain region to a first depth into the source/drain region and decreasing from the platform into the source/drain region;
• a gate structure over the fin;
• a silicide region on the surface of the source/drain region;
• and
• a contact on the silicide region.

A structure comprising:

• a gate structure over a channel region of a substrate;
• a first source/drain region in a semiconductor region adjacent the gate structure, wherein the first source/drain region comprises:
• a platform dopant region, wherein a first concentration of a first dopant in the platform dopant region is constant from an upper surface of the semiconductor region to a first depth;
• and
• a tailing dopant region in the first source/drain region, wherein a second concentration of the first dopant in the tailing dopant region decreases as the tailing dopant region extends away from the platform dopant region;
• a silicide region on the platform dopant region;
• and
• a contact on the silicide region.