Power electronic arrangement

A power electronic arrangement configured to conduct a forward current in a forward mode of the power electronic arrangement and to conduct a reverse current in a reverse mode of the power electronic arrangement, the power electronic arrangement comprising:

• a semiconductor switch structure configured to assume a forward conducting state, wherein a steady-state current carrying capability of the semiconductor switch structure in the forward conducting state is characterized by a nominal current, and wherein the semiconductor switch structure is configured to conduct, in the forward conducting state, at least a part of the forward current in the forward current mode of the power electronic arrangement;
• a diode structure electrically connected in antiparallel to the semiconductor switch structure and configured to conduct at least a part of the reverse current in the reverse mode of the power electronic arrangement;
• and
• a reverse-conducting structure monolithically integrated with the semiconductor switch structure,
• wherein in the reverse mode of the power electronic arrangement, the reverse-conducting structure conducts less than 10% of the reverse current if the amount of the reverse current is equal to or smaller than a first critical reverse current value, the first critical reverse current value amounting to at least the nominal current,
• wherein the reverse-conducting structure conducts at least 20% of the reverse current if the amount of the reverse current is equal to or larger than a second critical reverse current value, the second critical reverse current value amounting to at most 10 times the nominal current.