Manufacturing method of substrate structure

A manufacturing method of a substrate structure, comprising:

• forming a first build-up circuit structure;
• forming at least one first copper pillar and at least one second copper pillar on the first build-up circuit structure;
• forming a dielectric layer on the first build-up circuit structure, wherein the dielectric layer wraps the at least one first copper pillar and the at least one second copper pillar;
• and
• forming a second build-up circuit structure and a capacitive element on the dielectric layer, wherein the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer, the capacitive element is disposed in a capacitive element sitting region within the second build-up circuit structure, and the at least one first copper pillar and the at least one second copper pillar penetrate the dielectric layer and are electrically connected to the second build-up circuit structure and the first build-up circuit structure,
• wherein the at least one first copper pillar, the at least one second copper pillar, a second patterned circuit layer of the first build-up circuit structure, and a third patterned circuit layer of the second build-up circuit structure form an inductive element.