Integrated circuits with resistive non-volatile memory cells and methods for producing the same

An integrated circuit comprising:

• a memory cell including a transistor having a source and a drain, a first resistive unit in electrical communication with the source, and a second resistive unit in electrical communication with the drain, the first resistive unit including a first bottom electrode, a first top electrode, and a first resistive element positioned between the first bottom electrode and the first top electrode, the second resistive unit comprises a second bottom electrode, a second top electrode, and a second resistive element positioned between the second bottom electrode and the second top electrode, the first resistive element comprising a first resistive material, and the second resistive element comprising a second resistive material that is different than the first resistive material.