Perpendicular STTM free layer including protective cap

A magnetic tunnel junction (MTJ) free magnetic stack manufacturing method, comprising:

• depositing a cap layer across at least a portion of a first magnetic layer included in a plurality of magnetic layers, the cap layer comprising a metal oxide material selected from the group consisting of aluminum oxide (AlOx), tantalum oxide (TaOx), gadolinium oxide (GdOx), hafnium oxide (HfOx), titanium oxide (TiOx) and tungsten oxide (WOx);
• depositing a protective insert layer across at least a portion of the cap layer;
• and
• depositing a cap metal layer across at least a portion of the protective layer.

A perpendicular spin transfer torque memory (pSTTM) device that includes a magnetic tunnel junction (MTJ) storage device, the pSTTM device comprising:

• a solid-state switching device, that includes:
• a source coupled to a source line;
• a gate coupled to a word line;
• and
• a drain;
• wherein the MTJ storage device includes:
• a first electrode coupled to the solid-state switching device drain;
• a second electrode coupled to a bit line;
• a fixed magnetic layer stack coupled to the first electrode
• a dielectric layer coupled to the fixed magnetic layer stack, opposite the first electrode;
• and
• a free magnetic stack coupled to the second electrode, the free magnetic stack including:
• a cap layer, the cap layer comprising a metal oxide material selected from the group consisting of aluminum oxide (AlOx), tantalum oxide (TaOx), gadolinium oxide (GdOx), hafnium oxide (HfOx), titanium oxide (TiOx) and tungsten oxide (WOx);
• a plurality of magnetic layers having a first magnetic layer disposed proximate the cap layer;
• a cap metal layer;
• and
• a protective insert layer disposed between the cap layer and the cap metal layer, and proximate both the cap layer and the cap metal layer.

A magnetic tunnel junction (MTJ) free magnetic stack manufacturing system, comprising:

• a means for depositing a cap layer across at least a portion of a first magnetic layer included in a plurality of magnetic layers, the cap layer comprising a metal oxide material selected from the group consisting of aluminum oxide (AlOx), tantalum oxide (TaOx), gadolinium oxide (GdOx), hafnium oxide (HfOx), titanium oxide (TiOx) and tungsten oxide (WOx);
• a means for depositing a protective insert layer across at least a portion of the cap layer;
• and
• a means for depositing a cap metal layer across at least a portion of the protective layer.