Apparatus and methods for integrating magnetoresistive devices
AssigneeEverspin Technologies, Inc.
InventorsKerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
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Abstract
An integrated circuit device includes a memory portion and a logic portion. The memory portion may include a plurality of magnetoresistive devices and the logic portion may include logic circuits. The memory portion may include a plurality of metal conductors separated by a first interlayer dielectric material (ILD), wherein the first ILD is a low-k ILD or an ultra low-k ILD. And, the logic portion may include a plurality of metal conductors separated by a second interlayer dielectric material (ILD).
Claims20
A method of fabricating an integrated circuit device including a memory portion and a logic portion, comprising:
- forming a plurality of magnetoresistive devices spaced apart from each other on the memory portion;
- depositing an encapsulant on the plurality of magnetoresistive devices;
- depositing a first interlayer dielectric material (ILD) on the plurality of magnetoresistive devices after depositing the encapsulant, wherein the first ILD is a low-k ILD or an ultra low-k ILD;
- depositing a second ILD on the first ILD without first planarizing the deposited first ILD;
- etching the second ILD and the first ILD to expose top surfaces of the plurality of magnetoresistive devices, wherein the second ILD and the first ILD are etched until a portion of each of the plurality of magnetoresistive devices extends over a top surface of the etched first ILD;
- and
- forming electrical contacts with the exposed top surfaces of the plurality of magnetoresistive devices.
A method of fabricating an integrated circuit device including a memory portion and a logic portion, comprising:
- forming a plurality of magnetoresistive devices spaced apart from each other on the memory portion;
- depositing an encapsulant on the plurality of magnetoresistive devices;
- depositing a first interlayer dielectric material (ILD) on the plurality of magnetoresistive devices after depositing the encapsulant;
- depositing a second ILD on the first ILD without first planarizing the deposited first ILD, wherein the second ILD has a higher dielectric constant than the first ILD;
- etching the second ILD and the first ILD to expose top surfaces of the plurality of magnetoresistive devices, wherein the second ILD and the first ILD are etched until a portion of each of the plurality of magnetoresistive devices extends over a top surface of the etched first ILD;
- and
- forming electrical contacts with the exposed top surfaces of the plurality of magnetoresistive devices.
Dependencies are inferred from the claim text.