Semiconductor element, manufacturing method of semiconductor element, and electronic apparatus

A manufacturing method of a semiconductor element, the method comprising:

• laminating a via inner insulating film on a side wall portion of a through silicon via (TSV) formed in a substrate, wherein the via inner insulating film has a first coefficient of thermal expansion, wherein the substrate comprises a semiconductor layer and a dielectric layer, wherein the dielectric layer is stacked on a first surface of the semiconductor layer, wherein the TSV extends from a second surface of the semiconductor layer to a metal pad disposed in the dielectric layer;
• disposing a solder ball on the second surface of the semiconductor layer, wherein the solder ball is electrically connected to a metal wiring;
• and
• forming an insulating film between the metal wiring and the substrate, wherein the via inner insulating film separates a first portion of the insulating film from the substrate, wherein a second portion of the insulating film is in contact with the substrate, wherein the insulating film has a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion is between a coefficient of thermal expansion for the substrate and a coefficient of thermal expansion for the metal wiring, and wherein the first coefficient of thermal expansion differs from the second coefficient of thermal expansion.

An electronic apparatus comprising:

• an imaging element including:
• a substrate comprising a semiconductor layer and a dielectric layer, wherein the dielectric layer is stacked on a first surface of the semiconductor layer;
• a through silicon via (TSV) formed in the substrate, the TSV extending from a second surface of the semiconductor layer to a metal pad disposed in the dielectric layer;
• a via inner insulating film laminated on a side wall portion of the TSV, wherein the via inner insulating film has a first coefficient of thermal expansion;
• a solder ball disposed on the second surface of the semiconductor layer, wherein the solder ball is electrically connected to a metal wiring;
• and
• an insulating film between the metal wiring and the substrate, wherein the via inner insulating film separates a portion of the insulating film from the substrate, wherein a second portion of the insulating film is in contact with the substrate, wherein the insulating film has a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion is between a coefficient of thermal expansion for the substrate and a coefficient of thermal expansion for the metal wiring, and wherein the first coefficient of thermal expansion differs from the second coefficient of thermal expansion;
• an optical system configured to guide incident light to the imaging element;
• and
• a signal processing circuit configured to receive a signal output from the imaging element.