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US 10,950,647 B2Granted
Semiconductor device and method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorsTaku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
Life of this patent
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Abstract
A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.
Claims28
A light detecting device, comprising:
- a first semiconductor section including a first multi-wiring layer and a photodiode, wherein the first multi-wiring layer is on a side of the first semiconductor section opposite to a light incident side of the first semiconductor section, and wherein the first multi-wiring layer includes a first plurality of wiring layers and a first insulating interlayer;
- and
- a second semiconductor section including a second multi-wiring layer and a signal processing circuit, wherein the second multi-wiring layer includes a second plurality of wiring layers and a second insulating interlayer,
- wherein the first semiconductor section and the second semiconductor section are bonded together such that the first multi-wiring layer and the second multi-wiring layer face one another,
- wherein a first wiring included in the first plurality of wiring layers and a second wiring included in the second plurality of wiring layers are connected to each other,
- wherein a first part of the first insulating interlayer and a first part of the second insulating interlayer are connected to each other,
- wherein the first wiring is electrically connected to the photodiode,
- wherein the second wiring is electrically connected to the signal processing circuit,
- wherein the first wiring and the second wiring are disposed in a peripheral region other than a pixel region including the photodiode, and
- wherein the first plurality of wiring layers includes a third wiring and a fourth wiring, the third wiring and the fourth wiring are disposed in different layers, and a second part of the first insulating interlayer is disposed between the third wiring and the fourth wiring.
7 more elements
A light detecting device, comprising:
- a first semiconductor section including a first multi-wiring layer and a photodiode, wherein the first multi-wiring layer is on a side of the first semiconductor section opposite to a light incident side of the first semiconductor section, and wherein the first multi-wiring layer includes a first plurality of wiring layers and a first insulating interlayer;
- and
- a second semiconductor section including a second multi-wiring layer and a signal processing circuit, wherein the second multi-wiring layer includes a second plurality of wiring layers and a second insulating interlayer,
- wherein the first semiconductor section and the second semiconductor section are bonded together such that the first multi-wiring layer and the second multi-wiring layer face one another,
- wherein a first wiring included in the first plurality of wiring layers and a second wiring included in the second plurality of wiring layers are connected to each other,
- wherein a first part of the first insulating interlayer and a first part of the second insulating interlayer are connected to each other,
- wherein the first wiring is electrically connected to the photodiode,
- wherein the second wiring is electrically connected to the signal processing circuit, and
- wherein the first plurality of wiring layers includes a third wiring, the first wiring and the third wiring are disposed in different layers, and a second part of the first insulating interlayer is disposed between the first wiring and the third wiring.
6 more elements
Dependencies are inferred from the claim text.