Solid-state imaging device, method of manufacturing the same, and electronic device
AssigneeSony Semiconductor Solutions Corporation
InventorNaoyuki Sato
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AssigneeSony Semiconductor Solutions Corporation
InventorNaoyuki Sato
Estimating the term…
The present disclosure relates to a solid-state imaging device capable of further decreasing reflectivity, a method of manufacturing the same, and an electronic device. The solid-state imaging device includes a semiconductor substrate on which a photoelectric converting unit is formed for each of a plurality of pixels, and an antireflection structure provided on a light incident surface side from which light is incident on the semiconductor substrate in which a plurality of types of projections of different heights is formed. The antireflection structure is formed by performing processing of digging a light incident surface of the semiconductor substrate in a plurality of stages with different processing conditions. The antireflection structure is the structure in which a second projection lower than a first projection is formed between the first projections of predetermined height. The present technology may be applied to a CMOS image sensor, for example.
A light detecting device comprising a plurality of pixels arranged in columns and rows, wherein each pixel includes:
A method of manufacturing comprising a step of:
An electronic device comprising a light detecting device comprising a plurality of pixels arranged in columns and rows, wherein each pixel includes:
Dependencies are inferred from the claim text.