Back to results
US 10,950,645 B2Granted
Semiconductor device with a radiation sensing region and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
Claims20
A device comprising:
- a semiconductor substrate having a first surface and a second surface opposite to the first surface;
- a first isolation trench in the semiconductor substrate, the first isolation trench extending from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate;
- an N-type region in the semiconductor substrate, the N-type region being adjacent the first isolation trench;
- and
- a P-doped region in the semiconductor substrate, wherein a first portion of the P-doped region is interposed between the N-type region and the first isolation trench, a second portion of the P-doped region extends along the first surface of the semiconductor substrate, and a third portion of the P-doped region extends along the second surface of the semiconductor substrate.
2 more elements
A semiconductor device comprising:
- a P-type semiconductor substrate, the P-type semiconductor substrate having a first surface and a second surface opposite to the first surface;
- a radiation-sensing region in the P-type semiconductor substrate, the radiation-sensing region comprising an N-doped region of the P-type semiconductor substrate, a first surface of the radiation-sensing region being substantially parallel with the first surface of the P-type semiconductor substrate, a second surface of the radiation-sensing region being spaced apart from the second surface of the P-type semiconductor substrate, the first surface of the radiation-sensing region being opposite to the second surface of the radiation-sensing region;
- an isolation structure in the P-type semiconductor substrate, the isolation structure extending from the second surface of the P-type semiconductor substrate into the P-type semiconductor substrate;
- and
- a P-doped region in the P-type semiconductor substrate, wherein a first portion of the P-doped region extends along a sidewall of the isolation structure, and wherein a second portion of the P-doped region extends along the second surface of the P-type semiconductor substrate.
2 more elements
An image sensor comprising:
- a semiconductor substrate having a first conductivity type;
- a radiation-sensing region in the semiconductor substrate, the radiation-sensing region comprising a doped region having a second conductivity type, wherein the second conductivity type is opposite to the first conductivity type;
- a first isolation structure in the semiconductor substrate, the first isolation structure extending into the radiation-sensing region;
- a second isolation structure in the semiconductor substrate adjacent the first isolation structure, the second isolation structure extending into the radiation-sensing region;
- and
- a doped layer having the first conductivity type, a first portion of the doped layer extending along a sidewall of the first isolation structure, a second portion of the doped layer extending along a sidewall of the second isolation structure, a third portion of the doped layer extending from the first portion of the doped layer to the second portion of the doped layer, wherein the third portion of the doped layer is spaced apart from the radiation-sensing region.
3 more elements
Dependencies are inferred from the claim text.