Image sensor

An image sensor comprising a plurality of pixels, at least one of the pixels comprising:

• a photodiode configured to generate charges in response to light;
• and
• a pixel circuit comprising a storage transistor connected to the photodiode and a transfer transistor connected between the storage transistor and a floating diffusion node,
• wherein, in the pixel circuit, a potential is gradually decreased between the transfer transistor and the storage transistor in a direction away from the storage transistor when the transfer transistor is turned on.

An image sensor comprising a plurality of pixels, at least one of the pixels comprising:

• a photodiode configured to generate charges in response to light;
• and
• a pixel circuit comprising a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node,
• wherein an active region of the storage transistor comprises a first impurity region and a second impurity region having an impurity concentration lower than an impurity concentration of the first impurity region, and
• wherein the second impurity region and the first impurity region are sequentially disposed according to a transfer direction of the charges, the first impurity region being disposed closer to the transfer transistor.