Image sensors

An image sensor comprising:

• a first floating diffusion region;
• a second floating diffusion region;
• first, second, third and fourth photoelectric conversion elements connected to the first floating diffusion region;
• fifth, sixth, seventh and eighth photoelectric conversion elements connected to the second floating diffusion region;
• first, second and third transistors connected to the first to eighth photoelectric conversion elements;
• and
• first, second, third, fourth, fifth, sixth, seventh and eighth transfer gates configured to control first, second, third, fourth, fifth, sixth, seventh and eighth signals provided by the first, second, third, fourth, fifth, sixth, seventh and eighth photoelectric conversion elements, respectively,
• a first microlens disposed to overlap the first and second photoelectric conversion elements;
• a second microlens disposed to overlap the third and fourth photoelectric conversion elements;
• a third microlens disposed to overlap the fifth and sixth photoelectric conversion elements;
• and
• a fourth microlens disposed to overlap the seventh and eighth photoelectric conversion elements,
• wherein first, second, third and fourth transfer gates are sequentially arranged in a clockwise direction,
• wherein fifth, sixth, seventh and eighth transfer gates are sequentially arranged in the clockwise direction,
• wherein first, second and third transistors sequentially arranged in a first direction, and
• wherein the second transistor is disposed on a line extending in a second direction that is perpendicular to the first direction and is between the second transfer gate and the fifth transfer gate.

An image sensor comprising:

• a first floating diffusion region;
• a second floating diffusion region connected to the first floating diffusion region through wiring;
• first, second, third and fourth photoelectric conversion elements connected to the first floating diffusion region;
• fifth, sixth, seventh and eighth photoelectric conversion elements connected to the second floating diffusion region;
• first, second, third and fourth transistors connected to the first to eighth photoelectric conversion elements;
• first, second, third, fourth, fifth, sixth, seventh and eighth transfer gates configured to control first, second, third, fourth, fifth, sixth, seventh and eighth signals provided by the first, second, third, fourth, fifth, sixth, seventh and eighth photoelectric conversion elements, respectively;
• and
• four microlenses disposed to overlap pairs of photoelectric conversion elements among the first to eighth photoelectric conversion elements, respectively,
• wherein the first, second, third and fourth transfer gates are sequentially arranged in a clockwise direction,
• wherein the fifth, sixth, seventh and eighth transfer gates are sequentially arranged in the clockwise direction,
• wherein a red color filer is disposed to overlap the first to eighth photoelectric conversion elements,
• wherein the first, second and third transistors are arranged in a first direction, and
• wherein the first transistor and the second transistor are connected to each other in series.