Semiconductor-on-insulator wafer having a composite insulator layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Liang Liu, Yeur-Luen Tu
Life of this patent
Estimating the term…
Abstract
Various embodiments of the present disclosure are directed towards a semiconductor wafer. The semiconductor wafer comprises a handle wafer. A first oxide layer is disposed over the handle wafer. A device layer is disposed over the first oxide layer. A second oxide layer is disposed between the first oxide layer and the device layer, wherein the first oxide layer has a first etch rate for an etch process and the second oxide layer has a second etch rate for the etch process, and wherein the second etch rate is greater than the first etch rate.
Claims20
A method for forming a semiconductor wafer, the method comprising:
- forming a first oxide layer on a handle wafer via a thermal oxidation process;
- forming an etch stop layer over a donor wafer;
- forming a device layer over the etch stop layer;
- forming a second oxide layer on the device layer via a chemical vapor deposition (CVD) process;
- bonding the first oxide layer to the second oxide layer, wherein both the first oxide layer and the second oxide layer are disposed between the device layer and the handle wafer;
- and
- after the first oxide layer is bonded to the second oxide layer, removing the donor wafer via a first etching process.
A method for forming a semiconductor-on-insulator (SOI) wafer, the method comprising:
- growing a first insulator layer on a first semiconductor wafer via an oxidation process;
- forming an etch stop layer over a second semiconductor wafer;
- forming a semiconductor layer over the etch stop layer and the second semiconductor wafer;
- depositing a second insulator layer over the semiconductor layer and the etch stop layer via a deposition process;
- bonding the first insulator layer to the second insulator layer, such that the first insulator layer, the second insulator layer, and the semiconductor layer are disposed between the first semiconductor wafer and the second semiconductor wafer;
- and
- after the first insulator layer is bonded to the second insulator layer, removing the second semiconductor wafer and the etch stop layer to expose the semiconductor layer.
A method for forming a semiconductor-on-insulator (SOI) wafer, the method comprising:
- growing a first insulator layer on a handle wafer via an oxidation process;
- growing a processing layer on a donor wafer via a first epitaxial process;
- growing an etch stop layer on the processing layer via a second epitaxial process;
- growing a device layer on the etch stop layer via a third epitaxial process;
- depositing a second insulator layer over the device layer, the processing layer, and the etch stop layer via a chemical vapor deposition (CVD) process;
- removing edge regions of the second insulator layer, the etch stop layer, the processing layer, and the device layer;
- after the edge regions of the second insulator layer, the etch stop layer, the processing layer, and the device layer are removed, bonding the second insulator layer to the first insulator layer, such that outermost sidewalls of the second insulator layer, outermost sidewalls of the etch stop layer, outermost sidewalls of the processing layer, and outermost sidewalls of the device layer are disposed between outermost sidewalls of the first insulator layer;
- and
- after the second insulator layer is bonded to the first insulator layer, removing the donor wafer, the processing layer, and the etch stop layer to expose the device layer.
Dependencies are inferred from the claim text.