Three-dimensional memory device including split memory cells and methods of forming the same

A method of forming a three-dimensional memory device, comprising:

• forming a vertically alternating sequence of continuous insulating layers and continuous spacer material layers over a substrate;
• forming laterally alternating sequences of sacrificial pillar structures and memory openings through the vertically alternating sequence, wherein Each of the laterally alternating sequences extends along a first horizontal direction and the vertically alternating sequence is divided into alternating stacks of insulating layers and spacer material layers by the laterally alternating sequences of the sacrificial pillar structures and the memory openings;
• forming in-process memory opening fill structures in the memory openings, wherein each of the in-process memory opening fill structures comprises an in-process memory film and an in-process vertical semiconductor channel;
• removing portions of the sacrificial pillar structures selective to the in-process memory opening fill structures;
• dividing each of the in-process memory films into a respective pair of a first memory film and a second memory film;
• and
• dividing each of the in-process vertical semiconductor channels into a respective pair of a first vertical semiconductor channel and a second vertical semiconductor channel.