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US 10,950,625 B2Granted
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorYeo Jin Jeong
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes replacing sacrificial layers with conductive patterns through slits and at least one opening that pass through a stack structure. The stack structure includes interlayer insulating layers and the sacrificial layers. The interlayer insulating layers and the sacrificial layers surround a support and are alternately stacked on each other.
Claims19
A semiconductor device, comprising:
- a stack structure including interlayer insulating layers and electrode patterns which are alternately stacked on each other;
- and
- a support passing through the stack structure,
- wherein each of the electrode patterns includes a first conductive pattern, penetrated by the support, at least one second conductive pattern, extending along a side portion of the stack structure, and at least one third conductive pattern disposed between the first conductive pattern and the support, and
- wherein the first conductive pattern includes a first conductive material and each of the second and third conductive patterns includes a second conductive material having a lower resistance than the first conductive material.
2 more elements
A semiconductor device, comprising:
- interlayer insulating layers stacked to be spaced apart from each other;
- a support passing through the interlayer insulating layers;
- at least one opening passing through the interlayer insulating layers to expose a sidewall of the support;
- and
- electrode patterns filling spaces between the interlayer insulating layers,
- wherein the semiconductor device further comprises slits passing through the interlayer insulating layer, and wherein the at least one opening is formed along the sidewall of the support which faces at least one of the slits.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack structure including interlayer insulating layers and sacrificial layers, which surround a support and are alternately stacked on each other;
- forming slits which pass through the stack structure, wherein the support is disposed between the slits;
- forming a first opening which passes through the stack structure, wherein the first opening opens a side portion of the support;
- forming second openings by removing the sacrificial layers through the slits and the first opening;
- and
- forming an electrode pattern in each of the second openings through the slits and the first opening.
3 more elements
Dependencies are inferred from the claim text.