Vertical memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-Cheon Baek, Ji-Ye Noh, Yoon-Hwan Son, Ji-Sung Cheon
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Abstract
A vertical memory device includes gate electrodes on a substrate and a channel. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes, and includes a first portion, a second portion and a third portion. The second portion is formed on and connected to the first portion, and has a sidewall slanted with respect to the upper surface of the substrate so as to have a width gradually decreasing from a bottom toward a top thereof. The third portion is formed on and connected to the second portion.
Claims19
A vertical memory device comprising:
- gate electrodes stacked on a substrate, the gate electrodes being spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, wherein the gate electrodes include:
- first gate electrodes;
- second gate electrodes on the first gate electrodes;
- an insulation pattern on an uppermost one of the first gate electrodes;
- a connecting pattern on the insulation pattern and under a lowermost one the second gate electrodes;
- and
- a channel extending through the gate electrodes, the channel including:
- a first portion;
- a second portion on and connected to the first portion, the second portion having a sidewall slanted with respect to the upper surface of the substrate so that the second portion has a width that gradually decreases from a bottom toward a top of the second portion;
- and
- a third portion on and connected to the second portion,
- wherein a lower portion of the third portion and the second portion of the channel are surrounded by the connecting pattern, and an upper portion of the first portion of the channel is surrounded by the insulation pattern.
A vertical memory device comprising:
- gate electrodes stacked on a substrate, the gate electrodes being spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, wherein the gate electrodes include:
- first gate electrodes;
- second gate electrodes on the first gate electrodes;
- an insulation pattern on an uppermost one of the first gate electrodes;
- a connecting pattern on the insulation pattern and under a lowermost one the second gate electrodes;
- and
- a channel extending through the gate electrodes, the channel including:
- a first portion having a width that gradually increases from a bottom toward a top of the first portion;
- a second portion on and connected to the first portion, the second portion having a width that gradually decreases from a bottom toward a top of the second portion;
- and
- a third portion on and connected to the second portion, the third portion having a width that gradually increases from a bottom toward a top of the third portion,
- wherein a lower portion of the third portion and the second portion of the channel are surrounded by the connecting pattern, and an upper portion of the first portion of the channel is surrounded by the insulation pattern.
A vertical memory device comprising:
- gate electrodes stacked on a substrate, the gate electrodes being spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate;
- and
- a channel extending through the gate electrodes, the channel including:
- a first portion having a width that gradually increases from a bottom toward a top of the first portion;
- a protrusion protruding upwardly from an upper surface of the first portion;
- and
- a second portion on and connected to the first portion and overlapping the protrusion in the horizontal direction, the second portion having a width that gradually increases from a bottom toward a top of the second portion, wherein a width of a lower portion of the second portion is less than a width of an upper portion of the first portion.
Dependencies are inferred from the claim text.