Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorMasaki Kondo
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes first conductive layers stacked and second conductive layers stacked in a first direction. The second conductive layers spaced from the first conductive layers in a second direction intersecting the first direction. A first memory pillar is between the first conductive layers and the second conductive layers in the second direction. The first memory pillar extends in the first direction and has a first length in the second direction. A second memory pillar is between the first conductive layers and the second conductive layers in the second direction. The second memory pillar is adjacent to the first memory pillar. The second memory pillar extends in the first direction and has a second length greater than the first length in the second direction.
Claims11
A semiconductor memory device, comprising:
- a plurality of first conductive layers stacked in a first direction;
- a plurality of second conductive layers stacked in the first direction and spaced from the plurality of first conductive layers in a second direction intersecting the first direction;
- a first memory pillar between the plurality of first conductive layers and the plurality of second conductive layers in the second direction, the first memory pillar extending in the first direction, having a first length in the second direction, and including a first semiconductor layer extending in the first direction, a first charge storage film, between the first semiconductor layer and the plurality of first conductive layers, and a second charge storage film, between the first semiconductor layer and the plurality of second conductive layers;
- and
- a second memory pillar between the plurality of first conductive layers and the plurality of second conductive layers in the second direction, the second memory pillar being adjacent to the first memory pillar, extending in the first direction, having a second length greater than the first length in the second direction, and including a second semiconductor layer extending in the first direction and a third charge storage film.
Dependencies are inferred from the claim text.