Semiconductor device and a method of manufacturing a semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
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Abstract
A method of manufacturing a semiconductor device according to an embodiment of the present disclosure may include forming a first sacrificial layer including a first portion and a second portion having a thickness thicker than a thickness of the first portion, forming a stack including first material layers and second material layers alternating with each other on the first sacrificial layer, forming a channel structure passing through the stack and extending to the first portion, forming a slit passing through the stack and extending to the second portion, removing the first sacrificial layer through the slit to form a first opening, and forming a second source layer connected to the channel structure in the first opening.
Claims16
A method of manufacturing a semiconductor device, the method comprising:
- forming a first sacrificial layer comprising a first portion and a second portion having a thickness thicker than a thickness of the first portion;
- forming a stack comprising first material layers and second material layers alternating with each other on the first sacrificial layer;
- forming a channel structure passing through the stack and extending to the first portion;
- forming a slit passing through the stack and extending to the second portion;
- removing the first sacrificial layer through the slit to form a first opening;
- and
- forming a second source layer connected to the channel structure in the first opening.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first source layer;
- forming a first opening in the first source layer;
- forming, on the first source layer, a first sacrificial layer comprising a first portion and a second portion, wherein the second portion is formed in the first opening;
- forming a stack comprising sacrificial layers and insulating layers alternating with each other on the first sacrificial layer;
- forming a channel structure passing through the stack and having a bottom surface positioned in the first source layer;
- forming a slit passing through the stack and having a bottom surface positioned in the second portion;
- removing the first sacrificial layer through the slit to form a second opening;
- and
- forming a second source layer connected to the channel structure in the second opening.
Dependencies are inferred from the claim text.