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US 10,950,598 B2Granted
Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsTimothy E. Boles, Wayne Mack Struble
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Abstract
Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Claims13
An integrated circuit comprising:
- a first region of a substrate containing a first integrated device formed from a first semiconductor material, wherein the substrate comprises a doped silicon material;
- a second region of the substrate containing a second integrated device formed from a second semiconductor material of a different base elemental composition than the first semiconductor material, wherein the second semiconductor material is formed on the first semiconductor material located in the second region and the first semiconductor material located in the second region has a dopant density of at least 5×1018 cm−3;
- and
- a third region of the substrate containing an electrically-insulating dielectric material that extends through the substrate to contact a conductive film formed on a backside of the substrate, wherein the third region of the substrate is located between the first region and the second region.
1 more element
Dependencies are inferred from the claim text.