Transfer head and transfer system for semiconductor light-emitting device and method for transferring semiconductor light-emitting device

A method of transferring a semiconductor light-emitting device including an undoped semiconductor layer disposed on a carrier substrate, the method comprising:

• bringing a transfer head, including a base substrate and an electrode unit disposed on the base substrate, in adjacency to an undoped semiconductor layer of the semiconductor light-emitting device;
• applying a voltage to the electrode unit in order for an adhesive force to be applied to the undoped semiconductor layer with an electrostatic force;
• and picking up, by the transfer head, the semiconductor light-emitting device to transfer the semiconductor light-emitting device,
• wherein in the bringing of the transfer head in adjacency to the undoped semiconductor layer, the base substrate and the electrode unit are each provided to have light transmissivity so that the transfer head and the semiconductor light-emitting device are aligned.

A transfer head of a semiconductor light-emitting device, the transfer head comprising:

• a base substrate including a plane;
• and
• an electrode unit disposed on the plane of the base substrate to generate an electrostatic force by electrifying an undoped semiconductor layer of the semiconductor light-emitting device, the electrode unit including a first electrode lead and a second electrode lead disposed in parallel,
• wherein a plurality of protrusion electrodes are provided in each of the first electrode lead and the second electrode lead to selectively pick up a plurality of semiconductor light-emitting devices with the electrostatic force.

A transfer system for transferring a semiconductor light-emitting device disposed on a carrier substrate by using a transfer head, the transfer head comprising:

• a base substrate including a plane;
• and
• an electrode unit disposed on the plane of the base substrate to generate an electrostatic force by electrifying an undoped semiconductor layer of the semiconductor light-emitting device, the electrode unit including a first electrode lead and a second electrode lead disposed in parallel,
• wherein a plurality of protrusion electrodes are provided in each of the first electrode lead and the second electrode lead to selectively pick up a plurality of semiconductor light-emitting devices with the electrostatic force.