Package structure and method of forming the same

A structure comprising:

• a first die;
• an electrical connector adjacent the first die;
• an encapsulant encapsulating the first die and the electrical connector;
• a first redistribution structure comprising metallization patterns over the first die, the electrical connector, and the encapsulant, the first die and the electrical connector being electrically coupled to the first redistribution structure;
• a first conductive connector comprising a solder ball and an under bump metallization coupled to a first metallization layer in the first redistribution structure, an uppermost surface of the under bump metallization facing away from the first redistribution structure extends above the first metallization layer by a first height;
• and
• an integrated passive device directly bonded to the first metallization layer in the first redistribution structure with a first bonding joint, the integrated passive device being adjacent the first conductive connector, an uppermost surface of the first bonding joint facing away from the first redistribution structure extends above the first metallization layer by a second height, the first height being larger than the second height by at least 20 μm.

A structure comprising:

• an electrical connector adjacent a first die and a second die;
• a molding compound encapsulating the first die, the second die, and the electrical connector;
• a first redistribution structure comprising metallization patterns over the first die, the second die, the electrical connector, and the molding compound, wherein the first die, the second die, and the electrical connector are electrically coupled to the first redistribution structure;
• an under bump metallization physically and electrically contacting a first metallization layer in the first redistribution structure, the under bump metallization having a first height measured between a first surface of the under bump metallization contacting the first metallization layer and a second opposing surface of the under bump metallization;
• a first solder bump being on the under bump metallization;
• an integrated passive device bonded to the first metallization layer in the first redistribution structure with a first bonding joint, the first bonding joint physically and electrically contacting the first metallization layer and the integrated passive device, the integrated passive device being adjacent the first solder bump, the first bonding joint having a second height measured between a first surface of the first bonding joint contacting the first metallization layer and a second surface of the first bonding joint facing away from the first die, wherein the first height is larger than the second height, and a difference between the first height and the second height is greater than 20 μm;
• a substrate bonded to the first redistribution structure using the first solder bump;
• and
• a package structure comprising a third die, the package structure being bonded to the electrical connector with a second solder bump, the first and second dies being interposed between the package structure and the substrate.