Bonding wire for semiconductor device
AssigneesNippon Steel Chemical & Material Co., Ltd., Nippon Micrometal Corporation
InventorsTetsuya Oyamada, Tomohiro Uno, Takashi Yamada, Daizo Oda, Motoki Eto
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Abstract
The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
Claims4
A bonding wire for a semiconductor device containing Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities, wherein breaking elongation in a tensile test of the bonding wire is 8% to 15.5%, and the bonding wire has no coating layer.
Dependencies are inferred from the claim text.