Bonding wire for semiconductor device
AssigneesNippon Steel Chemical & Material Co., Ltd., Nippon Micrometal Corporation
InventorsTetsuya Oyamada, Tomohiro Uno, Hiroyuki Deai
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Abstract
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.
Claims8
A bonding wire for a semiconductor device comprising:
- a Cu alloy core material;
- and
- a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
- the Cu alloy core material contains Ni,
- a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and
- a thickness of the Pd coating layer is 0.016 to 0.150 μm.
A bonding wire for ball bonding, comprising:
- a Cu alloy core material;
- and
- a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
- the Cu alloy core material contains Ni,
- a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire,
- a thickness of the Pd coating layer is 0.016 to 0.150 μm, and
- a ball to be formed when the ball bonding is performed comprises an alloy containing Pd, Cu and Ni.
A bonding wire for a semiconductor device comprising:
- a Cu alloy core material;
- and
- a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
- the Cu alloy core material contains Ni,
- a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire,
- a thickness of the Pd coating layer is 0.016 to 0.150 μm, and
- the Cu alloy core material contains 3 to 100 wt. ppm of P relative to the entire wire.
Dependencies are inferred from the claim text.