Semiconductor device and method for manufacturing the semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsKenji Harada, Shinya Soneda
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Abstract
Provided is a technique for improving the durability of a semiconductor device. A semiconductor device includes a semiconductor substrate, an electrode on the semiconductor substrate, a solder-joining metal Him on the electrode, an oxidation-inhibiting metal film on the solder-joining metal film, and a solder layer on the oxidation-inhibiting metal film. The solder-joining metal film includes a first portion that does not overlap the oxidation-inhibiting metal film in plan view when the solder-joining metal film and the oxidation-inhibiting metal film are viewed from the oxidation-inhibiting metal film.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- an electrode on the semiconductor substrate;
- a solder-joining metal film on the electrode;
- an oxidation-inhibiting metal film on the solder-joining metal film;
- an insulating film on the oxidation inhibiting metal film, the insulating film including an opening extending through in a thickness direction of the insulating film;
- and
- a solder layer on the oxidation-inhibiting metal film, wherein
- the solder-joining metal film includes a first portion that does not overlap the oxidation-inhibiting metal film in plan view when the solder-joining metal film and the oxidation-inhibiting metal film are viewed from the oxidation-inhibiting metal film,
- the insulating film covers the first portion in the plan view, and
- the solder-joining metal film and the oxidation-inhibiting metal film are located in the opening.
Dependencies are inferred from the claim text.