Interconnect structures for preventing solder bridging, and associated systems and methods

A semiconductor die, comprising:

• a substrate;
• a first contact at a surface of the substrate;
• a second contact at the surface of the substrate, wherein the second contact is directly adjacent to the first contact;
• a first interconnect structure electrically coupled to the first contact, wherein the first interconnect structure includes a top surface having a first portion over the first contact and a second portion laterally offset from the first contact, wherein the top surface of the first interconnect structure extends laterally from the first portion to the second portion in a first direction;
• a first solder material disposed on the second portion of the top surface of the first interconnect structure;
• a second interconnect structure electrically coupled to the second contact, wherein the second interconnect structure includes a top surface having a third portion over the second contact and a fourth portion laterally offset from the second contact, wherein the top surface of the second interconnect structure extends laterally from the third portion to the fourth portion in a second direction opposite the first direction;
• and
• a second solder material disposed on the fourth portion of the top surface of the second interconnect structure.

A method for inhibiting solder bridging, the method comprising:

• forming an interconnect structure on a surface of a substrate and at least partially over a conductive contact of the substrate;
• forming a containment layer on at least a first portion of a top surface of the interconnect structure;
• and
• disposing a solder material on a second portion of the top surface of the interconnect structure, wherein the second portion of the top surface of the interconnect structure is at least partially laterally offset from the conductive contact, and wherein the second portion of the top surface of the interconnect structure extends laterally away from the first portion of the top surface of the interconnect structure in a direction (a) away from a center portion of the substrate and (b) toward an outer perimeter of the substrate.