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US 10,950,564 B2Granted
Methods of forming microelectronic devices having a patterned surface structure
AssigneeMicron Technology, Inc.
InventorsShing-Yih Shih, Tieh-Chiang Wu
Life of this patent
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Abstract
A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is in contact with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.
Claims18
A method of forming a microelectronic device, comprising:
- forming a metal material comprising a single material directly on a base material;
- forming a passivation material over the metal material;
- removing at least a portion of the passivation material to form a patterned surface structure in at least one opening in the passivation material;
- and
- forming a conductive structure comprising a solder material over the patterned surface structure, the conductive structure being in electrical contact with the metal material through the at least one opening in the passivation material, wherein the conductive structure extends between inner sidewalls of the passivation material with an upper surface of the conductive structure vertically above a plane of an upper surface of the passivation material and a maximum lateral extent of the conductive structure above the upper surface of the passivation material being the same or less than a maximum lateral extent of the at least one opening in the passivation material.
2 more elements
A method of forming a microelectronic device, comprising:
- forming passivation material over metal material;
- removing at least a portion of the passivation material to form openings therein;
- forming a patterned surface structure within the openings in the passivation material;
- and
- forming conductive structures comprising a solder material over the patterned surface structure, the conductive structures extending at least partially into the openings in the passivation material, and in electrical contact with the metal material through the openings in the passivation material, the conductive structures conforming to substantially entire portions of upper surfaces and sidewalls of the patterned surface structure, wherein the conductive structures extend laterally within the openings in the passivation material without being formed over exposed upper surfaces of the passivation material.
2 more elements
Dependencies are inferred from the claim text.