Semiconductor device, power converter, and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsNobuyoshi Kimoto, Mitsunori Aiko, Takaaki Shirasawa
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Abstract
An object is to provide a technique for reducing process steps, and a stress generated at the peripheral portion of the joint portion between an electrode of a semiconductor element and a lead frame. A semiconductor device includes the following: a semiconductor element disposed on a heat spreader; a lead frame joined to an emitter electrode of the semiconductor element via solder, which is a joining material; a metal film disposed on a surface of the emitter electrode; and an anti-oxidation film disposed on a surface of the metal film. The metal film has a peripheral portion that is entirely exposed from the anti-oxidation film.
Claims15
A semiconductor device comprising:
- a semiconductor element disposed on a heat spreader;
- a lead frame joined to an electrode of the semiconductor element via a joining material;
- a metal film disposed on a surface of the electrode;
- and
- an anti-oxidation film disposed on a surface of the metal film and interposed between the metal film and the joining material, wherein
- the metal film comprises a peripheral portion that is entirely exposed from the anti-oxidation film.
A semiconductor device comprising:
- a semiconductor element disposed on a heat spreader;
- a lead frame joined to an electrode of the semiconductor element via a joining material;
- a metal film disposed on a surface of the electrode;
- an anti-oxidation film disposed on a surface of the metal film;
- and
- a metal wire disposed throughout a peripheral portion of the anti-oxidation film.
A semiconductor device comprising:
- a semiconductor element disposed on a heat spreader;
- a lead frame joined to an electrode of the semiconductor element via a joining material;
- a metal film disposed on a surface of the electrode;
- an anti-oxidation film disposed on a surface of the metal film;
- and
- step portions disposed throughout peripheral portions of the anti-oxidation film and the metal film, the step portions protruding upward.
A semiconductor device comprising:
- a semiconductor element disposed on a heat spreader;
- a lead frame joined to an electrode of the semiconductor element via a joining material;
- a metal film disposed on a surface of the electrode;
- and
- an anti-oxidation film disposed on a surface of the metal film,
- wherein the metal film comprises a peripheral portion that is entirely exposed from the anti-oxidation film, and
- the entire peripheral portion of the metal film is oxidized.
A semiconductor device comprising:
- a semiconductor element disposed on a heat spreader;
- a lead frame joined to an electrode of the semiconductor element via a joining material;
- a metal film disposed on a surface of the electrode;
- and
- an anti-oxidation film disposed on a surface of the metal film,
- wherein the metal film comprises a peripheral portion that is entirely exposed from the anti-oxidation film, and
- the anti-oxidation film comprises a corner portion whose radius is larger than a radius of a corner portion of the metal film.
Dependencies are inferred from the claim text.