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US 10,950,553 B2Granted
System on integrated chips and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chuei-Tang Wang
Life of this patent
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Abstract
A semiconductor device and methods of forming are provided. The device includes a second die bonded to a first die and a third die bonded to the first die. An isolation material extends along sidewalls of the second die and the third die. A through via extends from the first die into the isolation material. A first passive device disposed in the isolation material, the first passive device being electrically connected to the first die.
Claims20
A device, comprising:
- a second die bonded to a first die;
- a third die bonded to the first die;
- an isolation material extending along sidewalls of the second die and the third die;
- a through via extending from the first die into the isolation material;
- a first passive device disposed in the isolation material, the first passive device being electrically connected to the first die;
- and
- a redistribution structure disposed over the second die, the third die, and the first passive device;
- and
- wherein a sidewall of the through via extends from the first die to the redistribution structure, and the sidewall of the through via is completely covered by the isolation material.
6 more elements
A device, comprising:
- a second die overlying a first die;
- an isolation material overlying the first die and extending along a plurality of sidewalls of the second die;
- and
- a first passive device disposed in the isolation material over the first die and next to the second die, wherein a thickness of the first passive device is substantially the same as a thickness of the second die, the thickness being measured between a first surface of the first passive device that contacts the first die and a second surface of the first passive device that contacts a redistribution structure overlying the first passive device.
1 more element
A device, comprising:
- a first die;
- a second dies second die and a third die bonded to the first die;
- an isolation material extending along sidewalls of the second die and the third die;
- a first passive device and a second passive device overlying the first die and disposed in the isolation material, wherein the first passive device and the second passive device have substantially a same thickness, the first passive device is next to a first sidewall of the second die, the second passive device is next to a second sidewall of the second die, and the first sidewall of the second die is orthogonal to the second sidewall of the second die;
- and
- a through via overlying the first die and extending through the isolation material.
3 more elements
Dependencies are inferred from the claim text.