Semiconductor package with through bridge die connections

A method, comprising:

• forming a first build-up layer, the first build-up layer having a power contact;
• forming one or more second build-up layers overlying the first build-up layer;
• removing portions of the one or more second build-up layers to form a cavity in the one or more second build-up layers;
• providing a bridge die within the cavity, wherein a backside of the bridge die is electrically connected to the power contact, the bridge die having a bridge die topside contact;
• forming one or more third build-up layers overlying the bridge die and the one or more second build-up layers, a first of the one or more third build-up layers having an interconnect electrically coupled to the bridge die topside contact;
• and
• attaching a first die and a second die to interconnects provided on the one or more third build-up layers.

A method, comprising:

• forming a first build-up layer, the first build-up layer having a power contact;
• forming one or more second build-up layers overlying the first build-up layer;
• removing portions of the one or more second build-up layers to form a cavity in the one or more second build-up layers;
• providing a bridge die within the cavity, wherein a backside of the bridge die is electrically connected to the power contact;
• forming one or more third build-up layers overlying the bridge die and the one or more second build-up layers;
• attaching a first die and a second die to interconnects provided on the one or more third build-up layers;
• and
• cutting through the first build-up layer, the one or more second build-up layers, and the one or more third build-up layers to singulate a semiconductor package having the bridge die.