High-performance variable gain amplifier employing laminate transmission line structures

A dual-channel amplification apparatus comprising:

• a first semiconductor integrated circuit (“IC”) chip comprising at least one first active component for implementing a first amplifier circuit associated with a first channel;
• a second semiconductor IC chip comprising at least one second active component for implementing a second amplifier circuit associated with a second channel;
• a first metal laminate structure comprising a first plurality of passive components and transmission line-based structures;
• and
• a second metal laminate structure arranged parallel to the first metal laminate structure, the second metal laminate structure comprising a second plurality of passive components and transmission line-based structures;
• wherein the first semiconductor IC chip is integrated with the first laminate structure such that a top layer of the first laminate structure comprises a first shield over a top of the first semiconductor IC chip and the first passive components for limiting electromagnetic coupling of signals comprising the first channel with signals comprising the second channel;
• and
• wherein the second semiconductor IC chip is integrated with the second laminate structure such that a top layer of the second laminate structure comprises a shield over a top of the second semiconductor IC chip and the second passive components for limiting electromagnetic coupling of signals comprising the second channel with signals comprising the first channel.

A variable gain amplifier (“VGA”) circuit comprising:

• a semiconductor integrated circuit (“IC”) chip comprising at least one active component for implementing an amplifier circuit;
• and
• a laminate structure comprising a plurality of metal layers, the laminate structure further comprising a plurality of passive components and transmission line-based structures;
• and
• a plurality of ground vias disposed around a periphery of the laminate structure from the top layer thereof to a bottom layer thereof for limiting electromagnetic coupling of signals produced by the amplifier circuit;
• wherein the semiconductor IC chip is integrated with the laminate structure such that a top layer of the laminate structure comprises a shield over a top of the semiconductor IC chip and the passive components for limiting electromagnetic coupling of signals generated by the amplifier circuit beyond the laminate structure.