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US 10,950,534 B2Granted
Through-substrate via structure and method of manufacture
AssigneeSemiconductor Components Industries, LLC
InventorsMichael J. Seddon, Francis J. Carney
Life of this patent
Estimating the term…
Abstract
A through-substrate vias structure includes a substrate having opposing first and second major surfaces. One or more conductive via structures are disposed extending from the first major surface to a first vertical distance within the substrate. A recessed region extends from the second major surface to a second vertical distance within the substrate and adjoining a lower surface of the conductive via. In one embodiment, the second vertical distance is greater than the first vertical distance. A conductive region is disposed within the recessed region and is configured to be in electrical and/or thermal communication with the conductive via.
Claims20
A through-substrate via structure comprising:
- a substrate having a first major surface and a second major surface opposite to the first major surface;
- a conductive via structure comprising:
- a trench extending from the first major surface to a first distance into the substrate;
- and
- a conductive material disposed within the trench;
- a recessed region disposed extending from the second major surface into the substrate to a second distance, wherein at least a portion of the recessed region is wider than the conductive via structure;
- a first conductive region within the recessed region;
- and
- an insulating layer disposed between the first conductive region and the substrate within the recessed region, wherein:
- the insulating layer extends outside of the recessed region and overlaps the second major surface;
- the insulating layer comprises an outer surface distal to and overlapping the second major surface outside of the recessed region;
- the first conductive region comprises:
- a conductive-fill structure disposed within the recessed region so as to laterally extend between opposing sidewalls of the recessed region in a cross-sectional view, the conductive-fill structure having an outermost surface distal to the conductive via structure;
- and
- a solder structure disposed adjacent to the outermost surface of the conductive-fill structure, the solder structure extending outside of the recessed region such that a distal end portion of the solder structure protrudes outward with respect to the outer surface of the insulating layer;
- the solder structure has a proximate end portion opposite to the distal end portion, the proximate end portion directly adjoining the outermost surface of the conductive-fill structure;
- the outermost surface of the conductive-fill structure is a major surface that is substantially coplanar with the outer surface of the insulating layer;
- and
- the proximate end portion is disposed outside of the recessed region such that side portions of the solder structure are devoid of the conductive-fill structure.
16 more elements
A through-substrate via structure comprising:
- a substrate having a first major surface and a second major surface opposite to the first major surface;
- a conductive via structure comprising:
- a trench extending from the first major surface to a first distance;
- an insulating structure disposed along a sidewall surface of the trench;
- and
- a conductive material disposed adjacent to the insulating structure within the trench;
- a recessed region disposed extending from the second major surface inward to a second distance, wherein the second distance is greater than the first distance;
- a first conductive region coupled to the recessed region;
- and
- an insulating layer disposed between the first conductive region and the substrate within the recessed region, wherein:
- the insulating layer comprises an opening that exposes the conductive material;
- the insulating layer extends outside of the recessed region and overlaps the second major surface;
- the insulating layer comprises an outer surface distal to and overlapping the second major surface outside of the recessed region;
- the first conductive region comprises:
- a conductive-fill structure disposed within the recessed region so as to laterally extend between opposing sidewalls of the recessed region in a cross-sectional view, the conductive-fill structure having an outermost surface that is distal to the conductive via structure;
- and
- a conductive structure disposed adjacent to the outermost surface of the conductive-fill structure, the conductive structure extending outside of the recessed region such that a distal end portion of the conductive structure protrudes outward with respect to the outer surface of the insulating layer;
- and
- the conductive-fill structure extends into the opening and physically contacts the conductive material at an interface defined by the substrate and the insulating layer.
16 more elements
A through-substrate via structure comprising:
- a substrate having a first major surface and a second major surface opposite to the first major surface;
- a conductive via structure comprising:
- a trench extending from the first major surface to a first distance;
- and
- a conductive material comprising tungsten disposed within the trench;
- a recessed region disposed extending from the second major surface inward to a second distance, wherein at least a portion of the recessed region is wider than the conductive via structure;
- a first conductive region in the recessed region;
- and
- an insulating layer disposed between the first conductive region and the substrate within the recessed region, wherein:
- the insulating layer comprises an opening that exposes the conductive material;
- the insulating layer extends outside of the recessed region and overlaps the second major surface;
- the insulating layer comprises an outer surface distal to and overlapping the second major surface outside of the recessed region;
- the first conductive region comprises:
- a conductive-fill structure disposed within the recessed region so as to laterally extend between opposing sidewalls of the recessed region in a cross-sectional view, wherein:
- the conductive-fill structure comprises an outermost surface distal to the conductive via structure,
- the conductive-fill structure physically contacts the insulating layer;
- and
- the outermost surface of the conductive-fill structure comprises a major surface that is substantially coplanar with the outer surface of the insulating layer;
- a conductive bump disposed adjacent to the outermost surface of the conductive-fill structure, the conductive bump extending outside of the recessed region such that a distal end portion of the conductive bump protrudes outward with respect to the outer surface of the insulating layer;
- the conductive bump further comprises a proximate end portion that adjoins the outermost surface of the conductive-fill structure and a side surface portion that connects the distal end portion to the proximate end portion;
- and
- the side surface portion is devoid of the conductive-fill structure.
19 more elements
Dependencies are inferred from the claim text.