Heterojunction semiconductor device for reducing parasitic capacitance

A semiconductor device, comprising:

• an active layer having an active region;
• at least one source electrode and at least one drain electrode disposed on the active region of the active layer and arranged along a first direction;
• at least one gate electrode disposed on the active region of the active layer and between the source electrode and the drain electrode;
• a first insulating layer disposed on the source electrode, the drain electrode, and the gate electrode;
• at least one first source pad disposed on the first insulating layer and the active region of the active layer, and the first source pad comprising:
• a first source body disposed on the source electrode and the drain electrode and extending along the first direction;
• and
• at least one first source branch electrically connected to the first source body and disposed on the source electrode;
• at least one first drain pad disposed on the first insulating layer and the active region of the active layer, and the first drain pad comprising:
• a first drain body disposed on the source electrode and the drain electrode and extending along the first direction;
• and
• at least one first drain branch electrically connected to the first drain body and disposed on the drain electrode, wherein the first drain branch comprises a top drain branch and a bottom drain branch;
• and
• a second insulating layer disposed on the first insulating layer, wherein the first source branch is disposed between the first insulating layer and the second insulating layer, the first source body is disposed on the second insulating layer, the bottom drain branch is disposed between the first insulating layer and the second insulating layer, the top drain branch is disposed on the bottom drain branch and the second insulating layer, a space is formed between the source electrode and the first drain body of the first drain pad, and the first source branch and the first drain branch are entirely present outside the space.