Resin encapsulated power semiconductor module with exposed terminal areas
AssigneesABB Schweiz AG, Audi AG
InventorFabian Mohn
Life of this patent
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Abstract
A power semiconductor module includes a substrate with a metallization layer; at least one power semiconductor chip bonded to the substrate; and a mold encapsulation partially encapsulating the semiconductor chip and the substrate; the mold encapsulation includes at least one window exposing a terminal area of the metallization layer; and a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of a central part of the mold encapsulation.
Claims20
A power semiconductor module, comprising:
- a substrate with a metallization layer;
- at least one power semiconductor chip bonded to the substrate;
- a mold encapsulation partially encapsulating the semiconductor chip and the substrate, wherein the mold encapsulation comprises at least one window exposing a terminal area of the metallization layer;
- a power terminal bonded with an end to the terminal area;
- wherein the mold encapsulation comprises a central part, which encapsulates the semiconductor chip;
- wherein a border part of the mold encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height over the substrate of the central part of the mold encapsulation;
- wherein a part of the power terminal protrudes above the border part in a direction parallel to the substrate, such that a vertical height over the substrate of the part is smaller than the maximal height of the central part of the mold encapsulation.
A method of manufacturing a power semiconductor module, the method comprising:
- providing a substrate with a metallization layer, with at least one power semiconductor chip bonded to the substrate;
- molding the semiconductor chip and the substrate into a mold encapsulation, wherein the mold encapsulation comprises a central part, which encapsulates the semiconductor chip, and the mold encapsulation comprises at least one window exposing a terminal area of the metallization layer and wherein a border part of the encapsulation between the window and a border of the substrate has a height over the substrate smaller than a maximal height of the central part of the mold encapsulation;
- bonding a power terminal with an end to the terminal area;
- wherein a part of the power terminal protrudes above the border part in a direction parallel to the substrate, such that a vertical height over the substrate of the part is smaller than the maximal height of the central part of the mold encapsulation.
Dependencies are inferred from the claim text.