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US 10,950,510 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeok Han Park
Life of this patent
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Abstract
A semiconductor device includes a base substrate, a protruding structure on the base substrate, a porous film on a side surface and an upper surface of the protruding structure, and an air gap between at least a part of the side surface of the protruding structure and the porous film.
Claims17
A semiconductor device, comprising:
- a base substrate;
- a protruding structure on the base substrate;
- a porous film on a side surface and an upper surface of the protruding structure;
- and
- an air gap between at least a part of the side surface of the protruding structure and the porous film, wherein an angle formed by the side surface of the protruding structure and an inner surface of the porous film varies continuously along the inner surface of the porous film and defines a convex portion and a concave portion along the inner surface of the porous film.
2 more elements
A semiconductor device, comprising:
- a base substrate;
- a protruding structure on the base substrate;
- a porous film extended along a side surface of the protruding structure;
- and
- an air gap between the side surface of the protruding structure and an inner surface of the porous film, wherein:
- an upper surface of the base substrate includes a first point spaced from the side surface of the protruding structure by a first distance, and a second point spaced apart therefrom by a second distance greater than the first distance,
- a height of the air gap at the first point is greater than a height of the air gap at the second point,
- the inner surface of the porous film includes a convex portion and a concave portion, and
- the air gap is defined at least in part by the inner surface of the porous film, and an angle formed between the side surface of the protruding structure and the inner surface of the porous film varies continuously along the inner surface of the porous film.
6 more elements
A semiconductor device, comprising:
- a base substrate;
- a protruding structure on the base substrate;
- a porous film extended along a side surface of the protruding structure;
- and
- an air gap between the side surface of the protruding structure and the porous film, the air gap including a first part having a width continuously decreasing away from an upper surface of the base substrate, wherein an angle formed between the side surface of the protruding structure and an outer surface of the first part of the air gap varies continuously along the outer surface of the first part of the air gap and defines a convex portion and a concave portion along the outer surface of the first part of the air gap.
2 more elements
Dependencies are inferred from the claim text.