Ion depth profile control method, ion implantation method and semiconductor device manufacturing method based on the control method, and ion implantation system adapting the control method
AssigneeSamsung Electronics Co., Ltd.
InventorsSeongrak Jeong, Seungmo Kang
Life of this patent
Estimating the term…
Abstract
An ion depth profile control method includes performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile, obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning, and generating a process recipe regarding the at least one process condition.
Claims20
An ion depth profile control method, comprising:
- performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile;
- obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning;
- and
- generating a process recipe regarding the at least one process condition.
An ion implantation method, comprising:
- performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile;
- obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning;
- generating a process recipe regarding the at least one process condition;
- and
- performing ion implantation on a wafer by applying the process recipe.
A method of manufacturing a semiconductor device, the method comprising:
- performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile;
- obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning;
- generating a process recipe regarding the at least one process condition;
- performing ion implantation on a wafer by applying the process recipe;
- and
- performing a subsequent semiconductor process on the wafer.
Dependencies are inferred from the claim text.