Multiple finFET formation with epitaxy separation
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Peng Xu
Life of this patent
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Abstract
A method for forming a semiconductor device includes: forming a plurality of fins from a substrate; removing at least one fin to form at least a first group of fins; conformally depositing a first insulating material layer on the first group of fins and the substrate; forming a second insulator over the first insulating material layer; removing the second insulator to reveal the tops of the first group of fins; removing the first insulating material layer between the fins and the second insulating material; forming a dielectric layer over the fins; and forming a work function metal over the dielectric layer.
Claims10
A method for forming a semiconductor device, the method comprising:
- forming a plurality of fins that extend vertically from a substrate;
- removing at least one fin to form at least a first group of fins;
- forming a fin hardmask on top of a substrate and the fins;
- conformally depositing a first insulating material layer on the first group of fins and the substrate, wherein the conformally deposited first insulating material layer has a vertical thickness measured vertically from the fin hardmask equal to a horizontal distance between adjacent fins in the first group of fins;
- forming a second insulator over the first insulating material layer such that the first insulating material layer separates the second insulating material from the substrate;
- removing the second insulator to reveal the tops of the first group of fins;
- removing the first insulating material layer between the fins and the second insulating material;
- forming a dielectric layer over the fins;
- and
- forming a work function metal over the dielectric layer.
A method for forming a gate of a fin Field Effect Transistor (finFET), the method comprising:
- forming a plurality of fins that extend vertically from a substrate;
- removing at least one fin to form at least a first group of fins;
- forming a fin hardmask on top of a substrate and the fins;
- conformally depositing a first insulating material layer on the first group of fins and the substrate, wherein the conformally deposited first insulating material layer has a vertical thickness measured vertically from the fin hardmask equal to a distance between adjacent fins in the first group of fins;
- forming a second insulating material layer over the first insulating material layer such that the first insulating material layer separates the second insulating material from the substrate;
- removing a portion of the second insulating material layer to reveal the tops of the first group of fins;
- removing the first insulating material between the fins and the second insulating material;
- forming a dielectric layer over the fins;
- and
- forming a work function metal over the dielectric layer.
Dependencies are inferred from the claim text.